Effective control of flat-band voltage in HfO2 gate dielectric with La2O3 incorporation

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430913

K. Okamoto, M. Adachi, K. Kakushima, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

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引用次数: 10

Abstract

The origin of negative flat-band shift using La₂O₃ incorporation in HfO₂ dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La₂O₃ at high-k/Si substrate or high-k/SiO₂ interface has either large amount of positive fixed charges or an additional dipole of 0.36 V compared to that of HfO₂/Si or HfO₂/SiO₂. Stacked MOSCAPs were fabricated and the C-V characteristics show that flat-band voltage shift is mainly determined by high-k film which is in contact to Si or SiO₂. Using HfLaO with different La concentration, the amount of shift in flat-band voltage could be well controlled, which might be due to the diffusion or pile-up of La atoms to the interface over 420degC. This study provides further insights in controlling the threshold voltage of HfO₂ based oxides.

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La2O3掺入对HfO2栅极介质平带电压的有效控制

利用La2O3掺入HfO2电介质引起负平带位移的来源已被广泛研究。通过对栅极有效功函数和各界面固定电荷的仔细提取，发现与HfO2/Si或HfO2/SiO2相比，高k/Si衬底或高k/SiO2界面的La2O3具有大量的正固定电荷或额外的偶极子0.36 V。叠层MOSCAPs的C-V特性表明，其平带电压位移主要由接触Si或SiO2的高k薄膜决定。使用不同La浓度的HfLaO，可以很好地控制平带电压的位移量，这可能是由于La原子在420℃以上向界面扩散或堆积造成的。该研究为控制HfO2基氧化物的阈值电压提供了进一步的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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