Jae-Hoon Lee, You-Seok Suh, H. Lazar, R. Jha, J. Gurganus, Yanxia Lin, V. Misra
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引用次数: 30
Abstract
Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO/sub 2/ and stacked HfO/sub 2//SiO/sub 2/ gate dielectrics. It was found that the work function values of metal gates on HfO/sub 2/ and on SiO/sub 2/ are similar. Thermal anneal studies of selected metals on the above dielectrics were also performed to evaluate the change in EOT and V/sub FB/ values.
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