325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062433

P. Page, C. Steinbeiser, T. Landon, G. Burgin, R. Hajji, R. Branson, O. Krutko, J. Delaney, L. Witkowski

引用次数: 8

Abstract

A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD friendly characteristics of the HVHBT Doherty final enable use of a non-linear Doherty driver while maintaining the same ease of correction for the overall lineup.

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325W HVHBT Doherty Final和LDMOS Doherty驱动器，增益为30dB, PAE为54%，在2c11 6.5dB PAR下线性化至-55dBc

一种两级高功率放大器，由325W高压HBT (HVHBT) Doherty终端和20W LDMOS Doherty驱动器组成，用于无线基站应用。该系列在75W (48.77dBm)平均输出功率和30dB增益下实现了54%以上的PAE，同时使用2C11 WCDMA输入信号和6.5dB PAR信号，在5MHz偏置下实现了-55dBc的线性化ACPR。HVHBT Doherty的DPD友好特性最终允许使用非线性Doherty驱动器，同时保持对整个阵容的相同易于校正。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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