C-V and DLTS as characterization tools for silicon solar cells

Abstract

Low frequency capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were performed on monocrystalline silicon solar cells with a 100 cm/sup 2/ area. The deep level transient spectroscopy (DLTS) technique is a good technique for detecting the majority carrier traps by thermal emission and emission of carriers at deep energy levels which are located in the space charge region (SCR) of a p-n junction or Schottky barrier. The space charge region is essentially depleted of mobile carriers and hence is very much like the bulk insulators.