Accurate modeling of SOI Multi-Gate FETs and their transient response to radiation

Abstract

Detailed, physics-based three-dimensional (3D) technology computer-aided-design (TCAD) device model, coupled in mixed-mode with external load circuit and parasitics, enabled accurate simulation of single-event effects (SEEs) in nonplanar silicon-on-insulator (SOI) Multi-Gate Field Effect Transistors (MuGFETs) or FinFETs. We show the importance of correct device physics models, including mobility in different crystal planes of strained silicon - validated with experimental data - for correct computation of both steady-state and transient characteristics of FinFETs. Mixed-mode coupling of a realistic load circuit, including experimental parasitics, with the 3D TCAD device model, is critical to be able to compute single-event transient current waveforms and charge collection characteristics that reflect well experimental results.