Dual band CMOS LNA design with current reuse topology

Abstract

A new architecture of dual band receiver was introduced; it is able to make simultaneous operations at two different frequency bands. This architecture uses a new dual band low noise amplifier (LNA). A novel high gain and low noise amplifier topology is proposed. This paper presents a general methodology to design a LNA with current reuse topology for the two standards GSM and UMTS at 947.5MHz and 2.14GHz frequencies respectively, A fully integrated dual band LNA was designed using 0.35mum CMOS process. At 947.5MHz, the LNA exhibits a noise figure of 2.3dB, a voltage gain of 28dB, a CP1 of -12dBm. However, the LNA at 2.14GHz features a noise figure of 2.71dB, a voltage gain of 17dB and a CP1 of -4.5dBm. The power consumption is 37.5mW under a power supply voltage of 2.5V