V. Kalygina, O.S. Kisleleva, B. Kushnarev, Y. Petrova, A. V. Almaev, V. Oleinik, A. Tsymbalov
{"title":"Self-powered Photodetectors based on the Ga2O3/n-GaAs","authors":"V. Kalygina, O.S. Kisleleva, B. Kushnarev, Y. Petrova, A. V. Almaev, V. Oleinik, A. Tsymbalov","doi":"10.56761/efre2022.n1-o-027801","DOIUrl":null,"url":null,"abstract":"The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by RF-magnetron sputtering on n-GaAs epitaxial layers with a concentration of Nd = 9.5ˑ1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and voltage-siemens dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. The samples exhibit the properties of a photodiode and are able to work offline when operating on a constant signal. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the bulk of the oxide film.","PeriodicalId":156877,"journal":{"name":"8th International Congress on Energy Fluxes and Radiation Effects","volume":"203 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Congress on Energy Fluxes and Radiation Effects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56761/efre2022.n1-o-027801","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by RF-magnetron sputtering on n-GaAs epitaxial layers with a concentration of Nd = 9.5ˑ1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and voltage-siemens dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. The samples exhibit the properties of a photodiode and are able to work offline when operating on a constant signal. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the bulk of the oxide film.
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