A 0.9V 5kS/s resistor-based time-domain temperature sensor in 90nm CMOS with calibrated inaccuracy of −0.6°C/0.8°C from −40°C to 125°C

Xian Tang, K. Pun, W. Ng
{"title":"A 0.9V 5kS/s resistor-based time-domain temperature sensor in 90nm CMOS with calibrated inaccuracy of −0.6°C/0.8°C from −40°C to 125°C","authors":"Xian Tang, K. Pun, W. Ng","doi":"10.1109/ASSCC.2013.6691009","DOIUrl":null,"url":null,"abstract":"This paper presents a new low-voltage temperature sensor which uses resistor as the sensing element and digitizes in time domain. Fabricated in 90nm CMOS, the sensor measures an inaccuracy of -0.6°C/0.8°C over -40°C~125°C range and a peak supply sensitivity of 4°C/V after two-point calibration at 25°C and 45°C. It dissipates 11.8μW at a sampling rate of 5kS/s from a 0.9V supply.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

This paper presents a new low-voltage temperature sensor which uses resistor as the sensing element and digitizes in time domain. Fabricated in 90nm CMOS, the sensor measures an inaccuracy of -0.6°C/0.8°C over -40°C~125°C range and a peak supply sensitivity of 4°C/V after two-point calibration at 25°C and 45°C. It dissipates 11.8μW at a sampling rate of 5kS/s from a 0.9V supply.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于90nm CMOS的0.9V 5kS/s电阻的时域温度传感器,校准精度为- 0.6°C/0.8°C,范围为- 40°C至125°C
本文提出了一种以电阻为传感元件,进行时域数字化的新型低压温度传感器。该传感器采用90nm CMOS制造,在-40°C~125°C范围内测量误差为-0.6°C/0.8°C,在25°C和45°C下进行两点校准后,峰值电源灵敏度为4°C/V。在0.9V电源下,采样率为5kS/s,功耗为11.8μW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Future mobile society beyond Moore's Law A 691 Mbps 1.392mm2 configurable radix-16 turbo decoder ASIC for 3GPP-LTE and WiMAX systems in 65nm CMOS Collaborative innovation for future mobile applications A 0.5V 34.4uW 14.28kfps 105dB smart image sensor with array-level analog signal processing An 85mW 14-bit 150MS/s pipelined ADC with 71.3dB peak SNDR in 130nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1