A 99%-efficiency 1-MHz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers
{"title":"A 99%-efficiency 1-MHz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers","authors":"Jing Xue, K. Ngo, Hoi Lee","doi":"10.1109/EDSSC.2013.6628142","DOIUrl":null,"url":null,"abstract":"A zero-voltage-switching (ZVS) boost converter using normally-off GaN power transistors and an on-chip gate driver are presented in this paper. The ZVS and adaptive dead-time control are developed to minimize the capacitive switching loss and body-diode recovery loss of the boost converter. Both high-side and low-side gate drivers provide ~6.8-ns propagation delays and ~2-ns rise/fall time, enabling MHz operation of the converter. With the proposed on-chip adaptive dead-time controlled gate drivers implemented in a 0.35-μm high-voltage CMOS process and 600-V normally-off GaN power transistors, the proposed 400-V ZVS boost converter delivers an output power of 1.6 kW and achieves a peak power efficiency of 99.2% at 1-MHz switching frequency.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
A zero-voltage-switching (ZVS) boost converter using normally-off GaN power transistors and an on-chip gate driver are presented in this paper. The ZVS and adaptive dead-time control are developed to minimize the capacitive switching loss and body-diode recovery loss of the boost converter. Both high-side and low-side gate drivers provide ~6.8-ns propagation delays and ~2-ns rise/fall time, enabling MHz operation of the converter. With the proposed on-chip adaptive dead-time controlled gate drivers implemented in a 0.35-μm high-voltage CMOS process and 600-V normally-off GaN power transistors, the proposed 400-V ZVS boost converter delivers an output power of 1.6 kW and achieves a peak power efficiency of 99.2% at 1-MHz switching frequency.