M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff
{"title":"EOT scaling and device issues for high-k gate dielectrics","authors":"M. Gardner, S. Gopalan, J. Gutt, J. Peterson, Hong-jyh Li, H. Huff","doi":"10.1109/IWGI.2003.159206","DOIUrl":null,"url":null,"abstract":"In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, we fabricate a high-k transistor for equivalent oxide thickness (EOT) scaling involving ALD and MOCVD.
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