{"title":"Experimental evidence of side-wall effects on microwave-FET DC and AC performances","authors":"H. Chen, G. Huang","doi":"10.1109/COMMAD.1998.791623","DOIUrl":null,"url":null,"abstract":"We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
