A Novel Environmentally-friendly Corrosion-free Post-stripping Rinsing Procedure After Solvent Strip

Vos, Rotondaro, Mertens, Meuris, Heyns
{"title":"A Novel Environmentally-friendly Corrosion-free Post-stripping Rinsing Procedure After Solvent Strip","authors":"Vos, Rotondaro, Mertens, Meuris, Heyns","doi":"10.1109/VLSIT.1997.623683","DOIUrl":null,"url":null,"abstract":"Corrosion of metal lines during the post-stripping rinse is a severe problem in multi-level metallization processes. In this paper it is demonstrated that the addition of small amounts of the inorganic acid HNO3 to the ultrapure water used for rinsing can effectively be used to suppress this corrosion without the need of an additional IPA- step.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Corrosion of metal lines during the post-stripping rinse is a severe problem in multi-level metallization processes. In this paper it is demonstrated that the addition of small amounts of the inorganic acid HNO3 to the ultrapure water used for rinsing can effectively be used to suppress this corrosion without the need of an additional IPA- step.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种新型环保、无腐蚀的溶剂剥离后清洗方法
金属线在汽提后冲洗过程中的腐蚀是多级金属化过程中的一个严重问题。本文证明,在超纯水中加入少量的无机酸HNO3可以有效地抑制这种腐蚀,而不需要额外的IPA-步骤。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Energy funnels - A new oxide breakdown model Fully Planarized Stacked Capacitor Cell With Deep And High Aspect Ratio Contact Hole For Gigs-bit DRAM Impact Of Trench Sidewall Interface Trap In Shallow Trench Isolation On Junction Leakage Current Characteristics For Sub-0.25 /spl mu/m CMOS Devices 0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB Reliability Dielectric Planarization Using Mn203 Slurry
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1