{"title":"Delta-Doped Sagm-Avalanche Photodiodes","authors":"R. Kuchibhotla, J. Campbell, C. Tsai, W. Tsang","doi":"10.1109/DRC.1991.664699","DOIUrl":null,"url":null,"abstract":"Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >
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