Jing Chen, Tao Yu, Jiexin Luo, Qingqing Wu, Z. Chai, Xi Wang
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引用次数: 0
Abstract
The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in RC and hysteresis reduction, and further improves the maximum fT from 16 to 53GHz. Analytical relationships are developed to quantify the impact of substrate bias on electrical characteristics, which further approved by calibrated Sentaurus simulations.
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