{"title":"Impact of process characteristics on submicron defect effects","authors":"B.W. Smith, K. Hirschman","doi":"10.1109/ASMC.1990.111220","DOIUrl":null,"url":null,"abstract":"The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 mu m, located from 0 to 5 mu m from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling.<<ETX>>","PeriodicalId":158760,"journal":{"name":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1990.111220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 mu m, located from 0 to 5 mu m from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
