T. Schulz, W. Xiong, C. Cleavelin, K. Schruefer, M. Gostkowski, K. Matthews, G. Gebara, R. J. Zaman, P. Patruno, A. Chaudhry, A. Woo, J. Colinge
{"title":"Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs)","authors":"T. Schulz, W. Xiong, C. Cleavelin, K. Schruefer, M. Gostkowski, K. Matthews, G. Gebara, R. J. Zaman, P. Patruno, A. Chaudhry, A. Woo, J. Colinge","doi":"10.1109/SOI.2005.1563571","DOIUrl":null,"url":null,"abstract":"Fin thickness non-uniformity is a potential shortcoming of vertical multiple-gate devices such as FinFETs and tri-gate FETs. In this paper a test structure with intentionally misaligned gates is used to investigate the sensitivity of electrical characteristics on fin thickness variations.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Fin thickness non-uniformity is a potential shortcoming of vertical multiple-gate devices such as FinFETs and tri-gate FETs. In this paper a test structure with intentionally misaligned gates is used to investigate the sensitivity of electrical characteristics on fin thickness variations.
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