S. Hamdioui, Z. Al-Ars, L. Mhamdi, G. Gaydadjiev, S. Vassiliadis
{"title":"Trends in tests and failure mechanisms in deep sub-micron technologies","authors":"S. Hamdioui, Z. Al-Ars, L. Mhamdi, G. Gaydadjiev, S. Vassiliadis","doi":"10.1109/DTIS.2006.1708677","DOIUrl":null,"url":null,"abstract":"The increasing integration density of semiconductor devices and the usage of new materials and innovative manufacturing techniques result in introducing new and gradually changing the types of failure mechanisms and defects that take place in manufactured silicon. This is particularly true for current deep submicron manufacturing technologies. As we approach the nanoscale domain, new types of fault models and test methods are needed to cope with the increasing complexity of the observed faulty behavior. This paper discusses the latest trends in testing and failure mechanisms in all stages of IC production","PeriodicalId":399250,"journal":{"name":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2006.1708677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
The increasing integration density of semiconductor devices and the usage of new materials and innovative manufacturing techniques result in introducing new and gradually changing the types of failure mechanisms and defects that take place in manufactured silicon. This is particularly true for current deep submicron manufacturing technologies. As we approach the nanoscale domain, new types of fault models and test methods are needed to cope with the increasing complexity of the observed faulty behavior. This paper discusses the latest trends in testing and failure mechanisms in all stages of IC production
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
