Ching-Wei Chen, C. Chien, S.-C. Ou, T. Perng, Da-Yuan Lee, Yi-Cheng Chen, Horng-Chih Lin, Tiao-Yuan Huang, Chun-Yen Chang
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引用次数: 0
Abstract
Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.
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