{"title":"GaAs monolithic image rejection down-converter for point-to-multipoint communication systems","authors":"G.L. Bonato, A. Boveda","doi":"10.1109/MCS.1992.186017","DOIUrl":null,"url":null,"abstract":"A fully integrated GaAs monolithic image rejection downconverter for L/S-band operation is presented. All the necessary subcircuits, such as the RF splitter, the local oscillator (LO) phase shifter, two mixers, and its biasing circuits, were included inside a GaAs chip. Only an IF hybrid was needed as an external component. Experimental results verified the good operation of the device, showing more than 20 dB of image rejection, 8-dB gain conversion, 30-dB LO-to-IF isolation, and 20-dB LO-to-RF isolation throughout the operating band. The monolithic microwave integrated circuit (MMIC) contained 18 MESFETs and 40 passive components in a 1.2-mm*3-mm area.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A fully integrated GaAs monolithic image rejection downconverter for L/S-band operation is presented. All the necessary subcircuits, such as the RF splitter, the local oscillator (LO) phase shifter, two mixers, and its biasing circuits, were included inside a GaAs chip. Only an IF hybrid was needed as an external component. Experimental results verified the good operation of the device, showing more than 20 dB of image rejection, 8-dB gain conversion, 30-dB LO-to-IF isolation, and 20-dB LO-to-RF isolation throughout the operating band. The monolithic microwave integrated circuit (MMIC) contained 18 MESFETs and 40 passive components in a 1.2-mm*3-mm area.<>
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