X-ray photoelectron spectroscopy of Al/sub x/Ga/sub 1-x/Sb grown by metalorganic chemical vapour deposition

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237214

A. H. Ramelan, K. Butcher, E. Goldys

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Abstract

The extent of oxidation and growth derived oxygen contamination for Al/sub 0.05/Ga/sub 0.95/Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d/sub 5/2/ and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al/sub 2/O/sub 3/, Sb/sub 2/O/sub 2/ and Ga/sub 2/O/sub 5/) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al/sub 0.05/Ga/sub 0.95/Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.

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金属有机化学气相沉积Al/sub -x/ Ga/sub - 1-x/Sb的x射线光电子能谱

采用高能分辨x射线光电子能谱(XPS)系统研究了金属有机化学气相沉积(MOCVD)生长的Al/sub 0.05/Ga/sub 0.95/Sb的氧化和生长源氧污染程度。Sb3d/sub 5/2/和O1s峰被很好地分辨，Ga3d峰也被很好地分辨。正如预期的那样，所有样品的表面都显示出氧化层(Al/sub 2/O/sub 3/， Sb/sub 2/O/sub 2/和Ga/sub 2/O/sub 5/)。特别是氧化铝的百分比非常高，而AlSb的百分比很小。这表明铝的表面对环境中的氧很敏感。地表碳含量也很高。深入地层，碳信号低于XPS和次级离子质谱(SIMS)的检测限，表明碳是由于大气暴露造成的。结果表明，在MOCVD体系中，以TMAl、TMGa和TMSb为金属有机前驱体生长的Al/sub 0.05/Ga/sub 0.95/Sb薄膜的碳含量极低。

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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