{"title":"Charge conservative FET modelling using ANNs","authors":"J. King, C. Wilson","doi":"10.23919/EUMIC.2017.8230696","DOIUrl":null,"url":null,"abstract":"The paper presents a comprehensive charge modelling approach for field-effect transistor (FET) devices. For the first time an artificial neural network (ANN) is combined with the division-by-current approach to FET charge modelling. Using this technique a large-signal charge model is extracted for a 10 W GaN device from MACOM. It is shown through measurements that excellent results may be obtained using just a single gate charge function, integrated analytically from small-signal measurements.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The paper presents a comprehensive charge modelling approach for field-effect transistor (FET) devices. For the first time an artificial neural network (ANN) is combined with the division-by-current approach to FET charge modelling. Using this technique a large-signal charge model is extracted for a 10 W GaN device from MACOM. It is shown through measurements that excellent results may be obtained using just a single gate charge function, integrated analytically from small-signal measurements.
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