S. Heo, S. Baek, Dongkyu Lee, Gyongho Buh, Yu-jeung Sin, H. Hwang
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引用次数: 0
Abstract
The electrical and structural characteristics of junction was affected during the activation annealing which was interpreted as a hydrogen effect. In this work, the hydrogen effect of arsenic n/sup +//p ultra-shallow junction formed by AsH/sub 3/ (arsine) plasma doping is reported. The additional hydrogen dopant retards the dopant activation due to the hydrogen damage effect confirmed by HR-XTEM analysis. The low temperature pre-annealing efficiently reduced residual defect. To obtain the high quality arsenic n/sup +//p junction formed by plasma doping, an additional annealing method is needed to remove the hydrogen damage effect. To measure electrical characteristics such as the sheet resistance and activated carrier concentration of doped samples, hall measurement was done.
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