{"title":"TSV based 3D stacked ICs: Opportunities and challenges","authors":"S. Hamdioui","doi":"10.1109/DDECS.2012.6219008","DOIUrl":null,"url":null,"abstract":"The industry is preparing itself for three-dimensional stacked ICs (3D-SICs), vertically interconnected by means of Through-Silicon Via's (TSVs). 3D-SIC is an emerging technology that promises huge advantages such as heterogeneous integration with higher performance and lower power dissipation at a smaller footprint. However, for 3D integration to become a viable product approach, many challenges have to be solved including design, manufacturing and test.","PeriodicalId":114139,"journal":{"name":"IEEE Workshop on Design and Diagnostics of Electronic Circuits and Systems","volume":"66 12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Workshop on Design and Diagnostics of Electronic Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2012.6219008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The industry is preparing itself for three-dimensional stacked ICs (3D-SICs), vertically interconnected by means of Through-Silicon Via's (TSVs). 3D-SIC is an emerging technology that promises huge advantages such as heterogeneous integration with higher performance and lower power dissipation at a smaller footprint. However, for 3D integration to become a viable product approach, many challenges have to be solved including design, manufacturing and test.
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