S. Schwantes, A. Heid, F. Dietz, M. Graf, V. Dudek
{"title":"A new leakage mechanism in SOI smart power technologies","authors":"S. Schwantes, A. Heid, F. Dietz, M. Graf, V. Dudek","doi":"10.1109/SOI.2005.1563524","DOIUrl":null,"url":null,"abstract":"Smart power SOI technologies are becoming popular because of better isolation. The SOI technology introduces a new electrode, the substrate electrode referred to as back gate. Several papers have reported back gate induced leakage current. This work reports a new leakage mechanism induced by the interaction of the neighbouring device and that back gate. Moreover, possible countermeasures for a 0.8 /spl mu/m 80V SOI technology are presented.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Smart power SOI technologies are becoming popular because of better isolation. The SOI technology introduces a new electrode, the substrate electrode referred to as back gate. Several papers have reported back gate induced leakage current. This work reports a new leakage mechanism induced by the interaction of the neighbouring device and that back gate. Moreover, possible countermeasures for a 0.8 /spl mu/m 80V SOI technology are presented.
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