P. Dars, G. Merckel, M. Haond, O. Coumar, R. Gaillard, H. Belhaddad
{"title":"Radiation induced kink effects on SOI PMOS transistors","authors":"P. Dars, G. Merckel, M. Haond, O. Coumar, R. Gaillard, H. Belhaddad","doi":"10.1109/SOSSOI.1990.145727","DOIUrl":null,"url":null,"abstract":"The authors discuss the influence of back oxide trapped charges on the degradation of the output characteristics of irradiated SOI PMOS transistors. It is found that a positive back gate bias during gamma irradiation promotes an accumulation of trapped holes at the Si-SiO/sub 2/ interface in the buried oxide. The induced parasitic kink effect, which is usually present in SOI NMOS, has been observed and characterized in a PMOS transistor. These results, explained by the increased electric field near the drain, are confirmed by a 2-D analysis. This phenomenon, related to P-channels, should be taken into account for analogical device and circuit optimization.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The authors discuss the influence of back oxide trapped charges on the degradation of the output characteristics of irradiated SOI PMOS transistors. It is found that a positive back gate bias during gamma irradiation promotes an accumulation of trapped holes at the Si-SiO/sub 2/ interface in the buried oxide. The induced parasitic kink effect, which is usually present in SOI NMOS, has been observed and characterized in a PMOS transistor. These results, explained by the increased electric field near the drain, are confirmed by a 2-D analysis. This phenomenon, related to P-channels, should be taken into account for analogical device and circuit optimization.<>
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