{"title":"Measurement Based Electro-Thermal Modeling of LDMOSFETs","authors":"P. Roblin","doi":"10.1109/ARFTG.2001.327496","DOIUrl":null,"url":null,"abstract":"This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2001.327496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.