R. MajidiAhy, S. Bandy, L. Ching, M. Glenn, C. Nishimoto, S. Silverman, S. Weng, G. Zdasiuk, Z. Tan, M. Riaziat
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引用次数: 3
Abstract
A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<>
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