{"title":"Optical and electrical properties of chemically deposited CdS thin films modified by air annealing","authors":"E. Gluszak, S. Hinckley","doi":"10.1109/COMMAD.1998.791680","DOIUrl":null,"url":null,"abstract":"Polycrystalline CdS thin films have been grown by chemical bath deposition (CBD) using cadmium acetate and thiourea as the Cd and S ion sources. The as-deposited films show a low degree of crystallinity, are very resistive (conductivity /spl sim/10/sup -7/ /spl Omega//sup -1//spl middot/cm/sup -1/) and possess a small degree of photosensitivity. Air annealing of the films at 100-400/spl deg/C for 1 hr converts them to n-type through partial conversion of CdS to CdO. This is accompanied by an increase in the photoconductivity by more than 6 orders of magnitude. The optical bandgaps of the as-deposited films were >2.38 eV, which decreased to /spl sim/2.24 eV after air annealing.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Polycrystalline CdS thin films have been grown by chemical bath deposition (CBD) using cadmium acetate and thiourea as the Cd and S ion sources. The as-deposited films show a low degree of crystallinity, are very resistive (conductivity /spl sim/10/sup -7/ /spl Omega//sup -1//spl middot/cm/sup -1/) and possess a small degree of photosensitivity. Air annealing of the films at 100-400/spl deg/C for 1 hr converts them to n-type through partial conversion of CdS to CdO. This is accompanied by an increase in the photoconductivity by more than 6 orders of magnitude. The optical bandgaps of the as-deposited films were >2.38 eV, which decreased to /spl sim/2.24 eV after air annealing.
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