A. Serra, T. Vogel, G. Lefévre, S. Petzold, N. Kaiser, G. Bourgeois, M. Cyrille, L. Alff, C. Trautmann, C. Vallée, D. Sylvain, C. Charpin-Nicolle, Gemma Navarro, E. Nowak
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引用次数: 1
Abstract
In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on $\mathbf{Ge}_{\mathbf{2}}\mathbf{Sb}_{\mathbf{2}}\mathbf{Te}_{\mathbf{5},}$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).
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