{"title":"A Novel Copper Reflow Process Using Dual Wetting Layers","authors":"Hirao, Satake, Kamada, Sekiguchi, Tamaki, Mayumi","doi":"10.1109/VLSIT.1997.623693","DOIUrl":null,"url":null,"abstract":"A novel Copper (Cu) reflow process, which locates two kinds of barrier layers with different wetting characteristics, is proposed. It enables low temperature reflow in spite of using barrier layers with good wetting characteristics, and realizes higher reliability of Cu interconnects","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A novel Copper (Cu) reflow process, which locates two kinds of barrier layers with different wetting characteristics, is proposed. It enables low temperature reflow in spite of using barrier layers with good wetting characteristics, and realizes higher reliability of Cu interconnects
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