Huihui Ji, Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, K. Suzuki, H. Oka
{"title":"Simulation of implantation into HfO/sub 2/ by MD method","authors":"Huihui Ji, Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, K. Suzuki, H. Oka","doi":"10.1109/IWJT.2004.1306867","DOIUrl":null,"url":null,"abstract":"Molecular dynamics (MD) method has not been reported to predict range profiles of implantation into HfO/sub 2/ and stopping power models especially electronic stopping power model has not been studied specifically. In this article, MD method is successfully applied to simulate B, As and P implantation into HfO/sub 2/. An efficient electronic stopping model with only one free parameter, i.e., the single electron radius, is carefully discussed. A reliable fitting value of the single electron radius is firstly given for B, As and P implantation into HfO/sub 2/. Using the obtained fitting value, simulation results agree with SIMS data excellently over the energy range of 5 - 40 keV.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Molecular dynamics (MD) method has not been reported to predict range profiles of implantation into HfO/sub 2/ and stopping power models especially electronic stopping power model has not been studied specifically. In this article, MD method is successfully applied to simulate B, As and P implantation into HfO/sub 2/. An efficient electronic stopping model with only one free parameter, i.e., the single electron radius, is carefully discussed. A reliable fitting value of the single electron radius is firstly given for B, As and P implantation into HfO/sub 2/. Using the obtained fitting value, simulation results agree with SIMS data excellently over the energy range of 5 - 40 keV.
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