A reliable and accurate approach to assess NBTI behavior of state-of-the-art pMOSFETs with fast-WLR

C. Schlunder, R. Vollertsen, W. Gustin, H. Reisinger
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引用次数: 10

Abstract

NBTI is a key challenge of today's technologies and could be assessed so far only by relative long stress durations. The On-the-fly characterization seems to be a proper method for fast-WLR, but shows also some problems. This work describes for the first time the application of OTF in combination with self-heating test structures and a method to correct the initial value without special equipment. Challenges and different solutions are introduced and discussed. We compare data from very fast non standard measurements with fWLR data acquired with regular test equipment. The insight we gained suggests that fWLR provides a suitable means for fast NBTI monitoring.
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一种可靠和准确的方法来评估最先进的pmosfet快速wlr的NBTI行为
NBTI是当今技术的一个关键挑战,迄今为止只能通过相对较长的应力持续时间来评估。动态表征似乎是一种合适的快速wlr方法,但也存在一些问题。本文首次介绍了OTF与自热测试结构相结合的应用,以及一种无需特殊设备即可校正初始值的方法。介绍和讨论了挑战和不同的解决方案。我们将非常快速的非标准测量数据与常规测试设备获得的fWLR数据进行比较。我们获得的见解表明,fWLR为快速监测NBTI提供了一种合适的方法。
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