{"title":"Nanoscale mapping of dopant distributions in InP current blocking layers","authors":"R. Hull, M. Moore, J. Walker","doi":"10.1109/SIM.1996.570923","DOIUrl":null,"url":null,"abstract":"A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
