{"title":"Single event charge enhancement in SOI devices","authors":"H. Belhaddad, R. Gaillard, G. Poirault, A. Poncet","doi":"10.1109/SOSSOI.1990.145692","DOIUrl":null,"url":null,"abstract":"Studies of single-particle ion effects in SOI (silicon-on-insulator) devices show that a new mechanism can contribute to soft error rates: the electron-hole pairs generated in the silicon substrate can charge the back Si-SiO/sub 2/-Si capacitor. An analysis with the 2-D device simulator JUPIN shows that the bulk Si substrate current contribution to the charging current is greater than the normal photocurrent created in the drain-body junction. This current is important in the inversion mode and is still present but reduced in the accumulation mode. An analytical model has been developed to relate the current characteristics to physical parameters of the SOI structure.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
Studies of single-particle ion effects in SOI (silicon-on-insulator) devices show that a new mechanism can contribute to soft error rates: the electron-hole pairs generated in the silicon substrate can charge the back Si-SiO/sub 2/-Si capacitor. An analysis with the 2-D device simulator JUPIN shows that the bulk Si substrate current contribution to the charging current is greater than the normal photocurrent created in the drain-body junction. This current is important in the inversion mode and is still present but reduced in the accumulation mode. An analytical model has been developed to relate the current characteristics to physical parameters of the SOI structure.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
