Single event charge enhancement in SOI devices

H. Belhaddad, R. Gaillard, G. Poirault, A. Poncet
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引用次数: 17

Abstract

Studies of single-particle ion effects in SOI (silicon-on-insulator) devices show that a new mechanism can contribute to soft error rates: the electron-hole pairs generated in the silicon substrate can charge the back Si-SiO/sub 2/-Si capacitor. An analysis with the 2-D device simulator JUPIN shows that the bulk Si substrate current contribution to the charging current is greater than the normal photocurrent created in the drain-body junction. This current is important in the inversion mode and is still present but reduced in the accumulation mode. An analytical model has been developed to relate the current characteristics to physical parameters of the SOI structure.<>
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SOI器件中的单事件电荷增强
对SOI(绝缘体上硅)器件中单粒子离子效应的研究表明,一种新的机制可以导致软错误率:硅衬底中产生的电子-空穴对可以给背面的Si-SiO/sub - 2/-Si电容器充电。利用二维器件模拟器JUPIN进行的分析表明,硅衬底电流对充电电流的贡献大于漏体结产生的普通光电流。该电流在倒转模式中很重要,在积累模式中仍然存在,但减少了。建立了一个解析模型,将电流特性与SOI结构的物理参数联系起来。
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