{"title":"Red electroluminescence of diamond thin films","authors":"Xiaoping Wang, Yu Zhu, Xin-Xin Liu","doi":"10.1117/12.888163","DOIUrl":null,"url":null,"abstract":"A diamond/SiO2/ indium-tin oxide (ITO) thin film multilayer structure of electroluminescent devices was reported. Effects of process parameters on morphologies and structures of the thin films were detected and analyzed by scanning electron microscopy, X-ray diffraction (XRD) spectrometer and X-ray photoelectron spectrometer (XPS). Finally a strong monochromatic red light emission was observed from this multilayer structure device, the electroluminescence spectrum at room temperature shows that the only illumination peak locates at 742nm, which is attributed to silicon atoms within the diamond film impurity center.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A diamond/SiO2/ indium-tin oxide (ITO) thin film multilayer structure of electroluminescent devices was reported. Effects of process parameters on morphologies and structures of the thin films were detected and analyzed by scanning electron microscopy, X-ray diffraction (XRD) spectrometer and X-ray photoelectron spectrometer (XPS). Finally a strong monochromatic red light emission was observed from this multilayer structure device, the electroluminescence spectrum at room temperature shows that the only illumination peak locates at 742nm, which is attributed to silicon atoms within the diamond film impurity center.
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