Feasibility study of plasma doping on Si substrates with photo-resist patterns

Abstract

Plasma doping is one of the candidates of the impurity doping processes to form shallow junction. Although the PD is a highly efficient doping process, it would be useful to establish a proper wet cleaning method that follows the PD processes so that the PD can be used in the conventional semiconductor fabrication flow. The effects of the photo-resist masks are examined in conjunction with the PD processes including the retained dose after the removal of the photo-resist using the ashing.