{"title":"A novel base current phenomenon in SiGe HBTs operating in inverse mode","authors":"A. Appaswamy, J. Cressler, G. Niu","doi":"10.1109/ESSDERC.2007.4430950","DOIUrl":null,"url":null,"abstract":"The inverse mode operation of SiGe HBTs down to cryogenic temperatures is examined for the first time. A novel base current \"flattening\" is observed at low temperatures, and the physics behind this unusual current-gain enhancing behavior is examined in detail using a combination of measurement and TCAD simulations.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The inverse mode operation of SiGe HBTs down to cryogenic temperatures is examined for the first time. A novel base current "flattening" is observed at low temperatures, and the physics behind this unusual current-gain enhancing behavior is examined in detail using a combination of measurement and TCAD simulations.
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