{"title":"InP MIS structure with phosphorus-nitride film grown by photo-CVD","authors":"Y. Jeong, J. Lee, Y. Hong, Y. Bae","doi":"10.1109/ICIPRM.1990.203046","DOIUrl":null,"url":null,"abstract":"Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub 3/N/sub 5/-InP MIS structure after the in-situ pretreatment and postanneal is about 3.6*10/sup 10/ cm/sup -2/ eV/sup -1/ near the midgap of the InP. Depth profiles determined from X-ray photoelectron and Auger spectroscopy data at deposition temperatures of 200 degrees C and 150 degrees C, respectively, show that the O atoms pile up at the P/sub 3/N/sub 5//InP interface and diffuse toward the P/sub 3/N/sub 5/ film. The data are used to evaluate the film and the interface.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub 3/N/sub 5/-InP MIS structure after the in-situ pretreatment and postanneal is about 3.6*10/sup 10/ cm/sup -2/ eV/sup -1/ near the midgap of the InP. Depth profiles determined from X-ray photoelectron and Auger spectroscopy data at deposition temperatures of 200 degrees C and 150 degrees C, respectively, show that the O atoms pile up at the P/sub 3/N/sub 5//InP interface and diffuse toward the P/sub 3/N/sub 5/ film. The data are used to evaluate the film and the interface.<>
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