J. Noguchi, T. Oshima, U. Tanaka, K. Sasajima, H. Aoki, K. Sato, K. Ishikawa, T. Saito, N. Konishi, S. Hotta, S. Uno, K. Kikushima
{"title":"Integration and reliability issues of Cu/SiOC interconnect for ArF/90 nm node SoC manufacturing","authors":"J. Noguchi, T. Oshima, U. Tanaka, K. Sasajima, H. Aoki, K. Sato, K. Ishikawa, T. Saito, N. Konishi, S. Hotta, S. Uno, K. Kikushima","doi":"10.1109/IEDM.2003.1269337","DOIUrl":null,"url":null,"abstract":"Cu/SiOC interconnect technology for ArF/90 nm node SoC manufacturing was investigated. This paper describes the integration and reliability issues. With regard to integration technologies, CMP delamination, SiOC damage and short defects on the trench bottom were improved dramatically. As to reliabilities, SM (stress migration), EM (electromigration) and TDDB (time dependent dielectric breakdown) were studied. Cu diffusion with via resistance increase by high temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integrated process was mature and sufficiently reliable for the operation condition.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
Cu/SiOC interconnect technology for ArF/90 nm node SoC manufacturing was investigated. This paper describes the integration and reliability issues. With regard to integration technologies, CMP delamination, SiOC damage and short defects on the trench bottom were improved dramatically. As to reliabilities, SM (stress migration), EM (electromigration) and TDDB (time dependent dielectric breakdown) were studied. Cu diffusion with via resistance increase by high temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integrated process was mature and sufficiently reliable for the operation condition.
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