C. Chen, R. Chang, P. Wyatt, C.K. Chen, D. Yost, J.M. Knech, C. Keast
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引用次数: 3
Abstract
The impact of body contacts on the floating body effect of fully depleted (FD) SOI at high frequencies is studied. It is found that the floating body effect is negligibly small for FDSOI FETs and the body contact (BC) increased parasitic capacitance and degraded the performance. We show that the linearity of an X-band amplifier, fabricated with a 180-nm FDSOI technology, is unchanged by the BC in continuous wave and pulse mode operations.
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