HCI-Proof Ultra-Broadband Millimeter-Wave Amplifier for Automotive Radar

N. Hasegawa, S. Kishimoto, S. Yamaura
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引用次数: 1

Abstract

In this paper, a circuit configuration to solve the problem of hot carrier injection (HCI) in a millimeter-wave amplifier is proposed. It is necessary to drive the LO-terminal of a mixer with sufficient voltage swing, but as it is generally known, there is the problem of HCI in CMOS transistors. Applying voltage exceeding the HCI limit to a transistor will accelerate the degradation of the transistor. Therefore, we controlled the output power of the driver amplifier to adjust the voltage swing to an allowable range. Furthermore, by controlling the output power, a wide range of frequency flatness from 72 GHz to 88 GHz has been achieved. This circuit is fabricated in 40-nm CMOS.
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用于汽车雷达的抗hci超宽带毫米波放大器
本文提出了一种解决毫米波放大器热载流子注入问题的电路结构。有必要用足够的电压摆幅来驱动混频器的lo端,但众所周知,CMOS晶体管中存在HCI问题。对晶体管施加超过HCI限制的电压将加速晶体管的退化。因此,我们控制驱动放大器的输出功率,将电压摆幅调整到一个允许的范围。此外,通过控制输出功率,实现了72ghz ~ 88ghz范围内的频率平坦度。该电路是在40纳米CMOS中制造的。
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