{"title":"Photomasks for advanced lithography","authors":"W. Smith, W. Tybula","doi":"10.1109/IEMT.1997.626941","DOIUrl":null,"url":null,"abstract":"The mask in lithography is the heart of the resulting image on the semiconductor wafer. The mask defines the image to be transferred to the wafer. The evolution of semiconductor manufacturing has seen masks improve from contact devices, that were good for a few pattern transfers, to projection/reduction masks that can be employed for tens of thousands of transfers. As the shrinking of the device dimensions continues, the challenges of obtaining the required quality mask images increases. Optical Proximity Correction (OPC) and Phase Shift Masks (PSM) are increasing the complexity of the masks and producing finer images. As the Next Generation lithography evolves, additional challenges will face the mask manufacturing professional. This paper is an overview of the requirements for the various types of masks.","PeriodicalId":227971,"journal":{"name":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1997.626941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The mask in lithography is the heart of the resulting image on the semiconductor wafer. The mask defines the image to be transferred to the wafer. The evolution of semiconductor manufacturing has seen masks improve from contact devices, that were good for a few pattern transfers, to projection/reduction masks that can be employed for tens of thousands of transfers. As the shrinking of the device dimensions continues, the challenges of obtaining the required quality mask images increases. Optical Proximity Correction (OPC) and Phase Shift Masks (PSM) are increasing the complexity of the masks and producing finer images. As the Next Generation lithography evolves, additional challenges will face the mask manufacturing professional. This paper is an overview of the requirements for the various types of masks.
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用于高级光刻的光罩
光刻技术中的掩模是半导体晶圆上生成图像的核心。掩模定义要传输到晶圆片的图像。半导体制造的发展已经见证了掩模的改进,从适合少量模式转移的接触式设备,到可以用于数万次转移的投影/缩减掩模。随着器件尺寸的不断缩小,获得所需质量掩模图像的挑战也在增加。光学接近校正(OPC)和相移掩模(PSM)增加了掩模的复杂性,并产生了更精细的图像。随着下一代光刻技术的发展,掩模制造专业人员将面临更多挑战。本文概述了对各类口罩的要求。
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