{"title":"Interface characterization in fully depleted SOI MOSFETs by dynamic transconductance","authors":"D. Ioannou, X. Zhong, G. Campisi, H. Hughes","doi":"10.1109/SOSSOI.1990.145700","DOIUrl":null,"url":null,"abstract":"The interface characterization for very thin (fully depleted) SOI (silicon-on-insulator) layers is addressed. A new technique, dynamic transconductance, has recently been developed for bulk MOSFETs and exhibited important advantages. The technique has been successfully adapted to partially depleted and depletion mode SOI MOSFETs. A model for the application of the dynamic transconductance technique in fully depleted SOI MOSFETs is developed, and the experimental conditions are described. A demonstration of the validity of the model is given by applying the technique to study fully developed SIMOX (separation by implantation of oxygen) MOSFETs.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The interface characterization for very thin (fully depleted) SOI (silicon-on-insulator) layers is addressed. A new technique, dynamic transconductance, has recently been developed for bulk MOSFETs and exhibited important advantages. The technique has been successfully adapted to partially depleted and depletion mode SOI MOSFETs. A model for the application of the dynamic transconductance technique in fully depleted SOI MOSFETs is developed, and the experimental conditions are described. A demonstration of the validity of the model is given by applying the technique to study fully developed SIMOX (separation by implantation of oxygen) MOSFETs.<>
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