Heteroepitaxial growth of GaN, AlN, and AlGaN layers on SiC substrates by HVPE

Abstract

Heteroepitaxial growth of group III nitride layers on SiC substrates by hydride vapour phase epitaxy (HVPE) is described in this paper. AlN, GaN, and AlGaN epitaxial layers were grown on 2-inch SiC substrates with a growth rate ranging from 0.2 to 1.5 /spl ges/m/min. The reciprocal space maps for the thin and thick AlN layers grown on SiC substrates is presented. Dependence of etch pit density in AlN layers on layer thickness is illustrated. X-ray theta-omega scan for GaN/AlN/SiC heterostructure was showed.