E. P. Neustroev, I. Antonova, H.Yu. Didyk, N. Dinu, V. Skuratov
{"title":"Hundred MeV ion irradiation effect on dopant depth profiles in silicon","authors":"E. P. Neustroev, I. Antonova, H.Yu. Didyk, N. Dinu, V. Skuratov","doi":"10.1109/SMICND.1998.733832","DOIUrl":null,"url":null,"abstract":"The effect of 430 MeV Kr and 614 MeV Xe ion irradiation on the dopant (Al, As, Sb, Ga, Bi) profiles in silicon crystals has been investigated. It has been found a dopant redistribution as a result of this irradiation and the most pronounced effect was seen for Sb and Bi dopants. The observed effect could be attributed to an enhanced diffusion of dopants due to damage structure introduced by high-energy ion irradiation (HEII) in ion track range.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of 430 MeV Kr and 614 MeV Xe ion irradiation on the dopant (Al, As, Sb, Ga, Bi) profiles in silicon crystals has been investigated. It has been found a dopant redistribution as a result of this irradiation and the most pronounced effect was seen for Sb and Bi dopants. The observed effect could be attributed to an enhanced diffusion of dopants due to damage structure introduced by high-energy ion irradiation (HEII) in ion track range.
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