Integration of 200 mm Si-CMOS and III-V materials through wafer bonding

Abstract

A method to integrate III-V compound semiconductors (GaN HEMT, InGaN LED, InGaAs HEMT or InGaP LED) with Si-CMOS on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily held on a Si handle wafer. Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer. Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si substrate. Through this method, a new generation of system with more functionality, better energy efficiency, and smaller form factor can be realized.