Defects caused by Sources other than Processing

R. van Roijen, Bryan N. Rhoads, A. Friedman, Aurelia Suwarno-Handayana, J. Ayala, Oh-jung Kwon, Michael Carbonell
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引用次数: 2

Abstract

We provide two examples of defects that caused real yield degradation on wafers, where the defects were not created during processing of the wafers. One is a case of a common non-process step unexpectedly causing a defect. The second is related to queue time, and shows that even in a modern highly controlled environment not all risks are always fully accounted for. We describe the mechanism behind the defects and provide specific solutions to the issues found. We also comment on the conditions that are most likely to make wafers susceptible to these defects and some guidelines that follow from these observations.
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非加工原因造成的缺陷
我们提供了两个缺陷的例子,导致晶圆上的实际良率下降,其中缺陷不是在晶圆加工过程中产生的。一种是常见的非过程步骤意外导致缺陷的情况。第二个与排队时间有关,它表明,即使在现代高度控制的环境中,也不是所有的风险都能得到充分考虑。我们描述了缺陷背后的机制,并为发现的问题提供了具体的解决方案。我们还评论了最有可能使晶圆容易受到这些缺陷影响的条件,以及根据这些观察得出的一些指导方针。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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