V. Litvinov, K. D. Demakov, O. A. Agueev, A. M. Svetlichnyi, R. Konakova, P. Lytvyn, V. V. Milenin
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引用次数: 0
Abstract
Studied the effect of rapid thermal annealing (RTA) on the parameters of diode structures with Ni-n-SiC-21R(0001) and Ni-n-SiC-21R(0001~) Schottky barriers. Ohmic contacts to these structures were formed by nickel resistive sputtering onto the substrate (heated up to 300/spl deg/C) followed with fusion at T = 450/spl deg/C for 10 min. It was shown that one can, in principle, obtain Ni-n-SiC diode structures (formed at Si- and C-faces of SiC-21R polytype) that are heat-tolerant up to 450/spl deg/C.
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