Reliability of monolithic RC-snubbers in MOS-based power modules

Abstract

The reliability of monolithic integrated 200 V RC-snubbers in silicon is investigated both on wafer and module level. The wafer level measurements indicate that the capacitor dielectric is capable of repetitively withstanding 200 V pulses with a continuous use voltage of 150 V for 46 years with a failure rate of 1 ppm. Potentially early failing devices can be identified on wafer level by a screening test. The RC-snubbers exhibit excellent stability to high temperature and high humidity high temperature based stress tests and to thermal cycling. This makes these devices a promising alternative to discrete surface mounted devices in RC snubber applications for modules in power electronic applications.