Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures

M. H. Rais, C. Musca, J. Dell, J. Antoszewski, B. Nener
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引用次数: 4

Abstract

This paper presents a study on the temperature and bias dependence of 1/f noise for mid-wavelength infrared (MWIR) HgCdTe n-on-p photodiodes fabricated on vacancy doped p-type LPE grown epilayers. The low frequency noise spectrum is fitted to a theoretical model to determine the dark current mechanism responsible for the 1/f noise component. At temperatures above 130 K the 1/f noise is dominated by the diffusion current component, and the temperature dependence in this regime gives an activation energy of 0.73E/sub g/. The Hooge parameter obtained from the model increased monotonically from 1.7/spl times/10/sup -4/ to 2.25/spl times/10/sup -3/ as the temperature was varied from 130 K to 180 K.
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高温下HgCdTe 3-5微米红外光伏探测器的低频噪声
本文研究了在空位掺杂p型LPE薄膜上制备的中波长红外(MWIR) HgCdTe n-on-p光电二极管1/f噪声的温度依赖性和偏置依赖性。将低频噪声谱拟合到理论模型中,以确定产生1/f噪声分量的暗电流机制。在130 K以上的温度下,1/f噪声主要由扩散电流分量控制,该温度依赖性给出了0.73E/sub g/的活化能。当温度从130 ~ 180 K变化时,模型得到的Hooge参数从1.7/spl times/10/sup -4/单调增加到2.25/spl times/10/sup -3/。
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